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| PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES * High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz) * Low intermodulation distortion * Covers all base station frequencies such as 800-MHz PDC and GSM * High-reliability gold electrodes * Hermetic sealed package * Internal matching circuit * Push-pull structure PACKAGE DRAWING (Unit: mm) 45 G1 S G2 45 3.30.3 11.40.3 19.40.4 D1 D2 1.4 3.20.2 0.3 3.20.2 13.50.3 28.00.3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current (D.C.) Total power dissipation Thermal resistance Channel temperature Storage temperature Symbol VDS VGS ID PT Rth Tch Tstg Ratings 60 7 15Note 290 0.6 200 -65 to +150 Unit V 0.1 2.50.2 V A W C/W C C 21.50.3 Note Per side G1, G2: gate D1, D2: drain S : source Flange is connected to the source. ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Gate leakage current Cut-off voltage Drain current Mutual conductance Output power Drain efficiency Linear gain Symbol IGSS VGS(off) IDSS gm PO VGS = 7 V VDS = 5 V, ID = 50 mA VDS = 60 V VDS = 5 V, ID = 3 A, ID = 100 mA f = 960 MHz, VDD = 30 V IDQ = 200 mA x 2, Pin = 40 dBm f = 960 MHz, VDD = 30 V IDQ = 200 mA x 2, Pin = 30 dBm f = 900 MHz, f = 0.1 MHz, VDD = 30 V IDQ = 200 mA x 2, PO = 42 dBm 2.0 80 35 11 90 40 12 1.5 Condition MIN. TYP. MAX. 1 4 2 Unit A V mA S W % dB D GL Third intermodulation distortion IM3 -38 dBc The information in this document is subject to change without notice. Document No. P10252EJ1V0DS00 (1st edition) Date Published October 1995 P Printed in Japan (c) 1.50.2 4.7MAX. 1995 2SK2597 OUTPUT v.s. IM3, ID CHARACTERISTICS THIRD ORDER INTERMODULATION DISTORTION / DRAIN CURRENT v.s. OUTPUT POWER -20 Vds = 30 V f1 = 900.0 MHz f2 = 900.1 MHz CLASS AB Idq = 200 mA x 2 Idq = 500 mA x 2 IM3 -30 ID IM3 (dBc) -40 4 3 -50 2 1 -60 28 0 30 32 34 36 38 40 42 44 46 48 POUT (dBm) (AVERAGE POWER) 5 ID (A) INPUT v.s. OUTPUT, POWER GAIN, EFFICIENCY (1) f = 960 MHz OUTPUT POWER / DRAIN EFFICIENCY / POWER GAIN vs. INPUT POWER 1000 f = 960 MHz VDD = 30 V IDQ = 200 mA x 2 100 Pout (W) 10 100 D 1 GP 10 .1 12 16 20 24 28 32 Pin (dBm) 36 40 44 48 52 2 GP (dB) D (%) Pout 2SK2597 (2) f = 900 MHz OUTPUT POWER / DRAIN EFFICIENCY / POWER GAIN vs. INPUT POWER 1000 f = 900 MHz VDD = 30 V IDQ = 200 mA x 2 Pout 100 Pout (w) 10 100 D 1 GP 10 .1 12 16 20 24 28 32 36 40 44 48 52 Pin (dBm) (3) f = 820 MHz OUTPUT POWER / DRAIN EFFICIENCY / POWER GAIN vs. INPUT POWER 1000 f = 820 MHz VDD = 30 V IDQ = 200 mA x 2 100 Pout (W) 10 100 D 1 GP 10 .1 12 16 20 24 28 32 Pin (dBm) 36 40 44 48 52 GP (dB) D (%) Pout GP (dB) D (%) 3 2SK2597 ZIN, ZOUT 1.4 0.6 0. 0. 06 44 0.5 13 0.0 0.4 5 5 14 0 0.4 0. 4 2.0 0 0.2 1.8 07 0. 43 0. 1.6 12 0 0.7 8 0.0 2 0.4 0.9 1.0 9 0.0 1 0.4 0.10 0.40 0.11 0.39 100 0.12 0.38 90 0.13 0.37 0.14 0.36 80 0.15 0.35 70 0.1 6 0.3 4 60 0.8 1.2 110 0.1 0.3 7 3 0. 0. 18 32 50 0.0 0 .4 4 6 +JX Zo 0.6 0.8 1.0 3. 0 1 0.2 9 0 .2 30 19 0. 31 0. 0 0.2 0 0.3 40 15 0 0.0 3 0.4 7 0 1. 0.02 0.48 0.01 0.49 820 (MHz) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 50 0 0 0.49 0.01 0.1 0.4 0.6 0.48 0.02 -160 1. 0.2 0. 8 -20 0 7 0.4 3. 0.0 X -J Zo 0 -15 6 0.4 4 0.0 0.3 5 0.4 5 0.0 0 14 0. 4 0.4 - 44 0. 06 0. 0.5 2.0 0.6 1.8 1.6 0.7 0.8 1.4 0.9 1.0 1.2 VDD = 30 V, IDQ = 200 mA x 2, Pin = 40 dBm f (MHz) 820 900 960 ZIN () 6.52 + j5.52 8.86 + j5.49 10.36 + j4.79 ZOUT () 2.34 + j0.91 2.78 + j3.23 2.95 + j3.37 4 50 RESISTANCE COMPONENT R 0.2 Zo 10 20 5.0 4.0 3. 32 0. 18 0 0. -5 0 3 0.3 7 0.1 -60 4 0.3 6 0.1 0.35 0.15 -70 0.36 0.14 1.0 -80 0.8 0.6 0.37 0.13 0.2 0.2 900 960 (MHz) 0.4 960 820 900 0.6 ZOUT 0.1 0. ZIN 8 -90 0.38 0.12 -100 0.39 0.11 0.40 0.10 -110 0.4 1 0.0 9 -12 0 0.4 0.0 2 8 -1 30 0. 0. 43 07 0.3 4.0 2 0.2 8 0.2 5.0 0.2 10 20 50 20 0.23 0.27 10 0.24 0.26 0.25 0.25 0.26 0.24 0 -10 0.27 0.23 0.2 8 0.2 2 0.2 0.2 9 1 -30 0.3 0.2 0 0 -4 0 0. 0. 31 19 2SK2597 APPLICATION CIRCUIT EXAMPLE (f = 960 MHz) To Gate Bias Circuit To Drain Bias Circuit DUT 30 pF IN 2 pF 30 pF 5 pF 13 pF 1 pF 20 pF 1 pF 5 pF 20 pF OUT Teflon substrate (t = 0.8 mm) : Through hole To Gate Bias Circuit To Drain Bias Circuit Notes on Handling This product internally uses beryllie porcelain (beryllium oxide). If powder or vapor of beryllium oxide enters your respiratory organs, you will have a difficulty in breathing, which is dangerous. Therefore, do no disassemble or chemically process the product. Be sure to abolish the product separately from general industrial wastes or garbage. 5 2SK2597 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2 |
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